| Customization: | Available |
|---|---|
| Type: | Diffuse Reflection Type Photoelectric Sensor |
| Output Signal Type: | Switching Type |
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| Item | Specification table | ||
| Sensing type | Diffuse reflection | Mirron | Through beam reflection |
| Minimum detection | Opaque object Φ10 .0x0 .8mm | Opaque object Φ5 .0x0 .8mm | |
| Tandard target | 100x100mm White paper | Opaque object Φ12.0x0.8mm or more | Opaque object Φ8 .0x0 .8mm |
| Zero sensitivity adjustment | Yes | ||
| Light source | 940nm infrared modulated light | 650nm infrared modulated light | 940nm infrared modulated light |
| Hysteresis | <15% Scanning distance | <2% Scanningdistance | |
| Operating Voltage | 12~24VDC±10% impulse ( P- P) 10% | ||
| Current consumption | <20mA | ||
| Load current | 100mA | ||
| Leakage current | <0.01mA No Load | ||
| Residual voltage | < 1.5VDC(Load current 100mA, wire 2M ) | ||
| Repeatability | <5% Scanning distance | <2% Scanningdistance | |
| Response frequency | 300HZ | 600HZ | |
| Reverse polarity protectiom | Yes | ||
| Short circuit protection | Yes | ||
| Output type | NPN . NO/ NPN .NC PNP. NO/ PNP. NC NPN . NO. NC/ PNP.NO. NC | ||
| Response time | 0 .5ms | ||
| Insulation resistance | >20MΩ( Between the charging part and the outer casing) | ||
| Dielectric strength | 1000VDC 50~60Hz 1min ( Between the charging part and the outer casing) | ||
| Ambient temperature | -10~50ºC(Withou icing or condensation ) | ||
| Ambient humidity | 35~85% HR Relative humidtuy | ||
| Ambien illumination | Sunlight : below 3,000LX , Light: below 2,000LX | ||
| Storage temperature | -20~60ºC(Withou icing or condensation) | ||
| Storage humidity | 35~95% HR Relative humidtuy | ||
| Protection degree | IP65 | ||
| Connection | Φ4.0x2M/2-wires Φ4.0x2M/3-wires Φ4.0x2M/4-wires Φ4.0Lead 150mm with M8 connector Direct with M12 connector | ||
| Material | ABS+PC | ||
| Weight | Approx: 58g/58.5/59g/59g/114g | ||
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